METHOD FOR FORMING ALUMINIUM METAL INTERCONNECTION

摘要

PURPOSE: A method for forming an aluminium metal interconnection is provided to improve productivity of an aluminium interconnection process by eliminating the necessity of additionally depositing an insulation layer as an anti-nucleation layer. CONSTITUTION: A nitrogen-containing interlayer dielectric is formed on the main surface of a semiconductor substrate and in a contact hole or a groove. A plasma treatment is performed on the first surface of the interlayer dielectric located on the first surface of the substrate to form a passivation layer on the first surface of the interlayer dielectric. The CVD(chemical vapor deposition) process is performed to control the deposition of an aluminium layer on the first surface of the interlayer dielectric and to form an aluminium layer only on the second surface of the interlayer dielectric located on the inner surface of the contact hole or the groove. The plasma treatment process and the CVD process are performed without a vacuum break in the center.