发明名称 |
Sputter target, barrier film and electronic component |
摘要 |
A sputter target is made of a Ti-Al alloy containing Al in the range of 1 to 30 atm %. In the Ti-Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti-Al alloy is 500 mum or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti-Al-N film as a barrier film is formed by using the sputter target made of the Ti-Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate. |
申请公布号 |
US6750542(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20020257404 |
申请日期 |
2002.10.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUZUKI YUKINOBU;ISHIGAMI TAKASHI;KOHSAKA YASUO;FUJIOKA NAOMI;WATANABE TAKASHI;WATANABE KOICHI;SANO KENYA |
分类号 |
C23C14/06;C23C14/34;H01L21/02;H01L21/285;H01L21/768;(IPC1-7):H01L23/48 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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