SCHOTTKY DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a Schottky diode which is improved in electrical properties by forming a clean Schottky interface where irregularities at atomic level are not present and no crystal defect and no contaminant reside. SOLUTION: The Schottky diode is composed of a semiconductor substrate whose surface is a first crystal orientation plane, and a metallic part that is made of metallic atoms introduced through the surface of the semiconductor substrate to form a Schottky barrier on the second crystal orientation plane of the semiconductor substrate. COPYRIGHT: (C)2004,JPO