| 摘要 |
PURPOSE: A semiconductor device and a fabricating method thereof are provided to obtain the extended effective channel length by using a buried type gate electrode. CONSTITUTION: A projected gate electrode(180) is buried into a semiconductor substrate(100). A gate oxide layer(170) is formed on a boundary between the semiconductor substrate and the gate electrode. A channel region(150,160) is formed on the semiconductor substrate adjacent to a lower side of the gate electrode. An insulating layer spacer(190) is formed on a sidewall of the projected gate electrode. A low-density doping region(110) is formed on the semiconductor substrate of both sides of the projected gate electrode. A high-density doping region(200) is formed on both sides of the low-density doping region.
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