| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent the unbalance of photoresist layer patterns due to the density difference between via hole patterns by using an inorganic anti-reflective layer for burying a via hole. CONSTITUTION: A capping layer(14) and an interlayer dielectric(16) are formed on a semiconductor structure(10) including a lower metal line(12). A via hole is formed by patterning the interlayer dielectric. The via hole is buried by an inorganic anti-reflective layer. A trench for an upper metal line having a wider aperture than the via hole is formed by etching partially the inorganic anti-reflective layer and the interlayer dielectric. The inorganic anti-reflective layer is removed from the interlayer dielectric and the via hole. The exposed capping layer is removed therefrom. The upper metal line(24) is formed by burying the via hole and the trench. A metal line of a dual damascene structure is formed by performing a thermal process and a planarization process for the upper metal line.
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