| 摘要 |
PURPOSE: A method for forming a silicide of a CMOS image sensor is provided to improve properties of the image sensor by forming a silicide layer on a contact of a pixel region. CONSTITUTION: Gate electrodes(22a,22b,22c) with a spacer(23) are formed on a substrate(20) defined by a pixel region, an I/O circuit region and a peripheral region. A silicide barrier layer(26) is formed on the resultant structure and the gate electrodes are exposed by blanket etching. A mask is formed on the resultant structure to open a contact forming portion of the pixel region and the peripheral region and to cover the I/O circuit region. By blanket etching of the resultant structure using the mask, the silicide barrier layer on the peripheral region and the contact forming portion of the pixel region is removed. Then, a silicide layer(28) is formed on the exposed region.
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