| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to reduce cross-talk by forming deeply a trench to expose a substrate and forming a metal silicide layer at sidewalls and bottom of the trench. CONSTITUTION: A lightly doped p-type epitaxial layer(22) is formed on a heavily doped p-type substrate(21). A trench is formed in the epitaxial layer to expose partially the substrate. A metal silicide layer(26) for reflecting light is formed at sidewalls and bottom of the trench to contact the substrate. A trench isolation layer(27) is filled in the trench. Doping regions(29,31) for a photodiode are formed in the epitaxial layer to contact the substrate.
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