METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

PURPOSE: A method for fabricating a CMOS image sensor is provided to improve the performance by forming a copper contact, a copper barrier, and a photodiode open part. CONSTITUTION: A gate electrode and a source/drain region are formed on a semiconductor substrate(10) including a photodiode. A first insulating dielectric(12) is formed thereon. A pattern is formed on a predetermined region of the first insulating dielectric. A contact hole is formed by performing an etch process. A first copper contact(C1) is formed by depositing copper into the contact hole. A first copper barrier layer(14) is formed on the first insulating dielectric. A first photodiode open part is formed on a predetermined region of the first copper barrier layer. A second insulating dielectric(16) is formed on the entire surface of the semiconductor substrate. A second copper contact(C2) is formed by etching the second interlayer dielectric. A second copper barrier layer(18) is formed on the second interlayer dielectric. A second photodiode open part is formed on the second copper barrier layer.