发明名称 FIELD EMISSION DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A field emission device and a manufacturing method thereof are provided to prevent influences of a dielectric breakdown element on the adjacent normal element upon occurrence of short caused due to a dielectric breakdown. CONSTITUTION: A field emission device comprises a lower electrode(24) formed on a substrate; an anode oxide film(25) formed on a certain part of the lower electrode; a tunnel oxide film(26) formed on a certain part of the lower electrode; a dual insulation film(27) formed on the resultant structure, and which has an aperture formed on the tunnel oxide film; an upper data electrode(28) formed on the dual insulation film, and which has a protruded portion exposed in the aperture; and a top electrode formed on the resultant structure and connected to the exposed portion of the upper data electrode.
申请公布号 KR20040067659(A) 申请公布日期 2004.07.30
申请号 KR20030004877 申请日期 2003.01.24
申请人 LG ELECTRONICS INC. 发明人 PARK, MIN SU
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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