| 摘要 |
A method for creating a MEMS structure (100) is provided. In accordance with the method, an article is provided comprising a substrate (101), a sacrificial layer (103) and a semiconductor layer (105), wherein the sacrificial layer comprises a first material such as silicon oxide. A MEMS structure is then formed in the semiconductor layer. The structure has first (107) and second (109) elements which have an exposed portion of the sacrificial layer (103) disposed between them. The first element is then released from the substrate (101) by contacting the exposed portion of the sacrificial layer (103) with a first etchant, typically by way of one or more trenches (119), after which the first element is reattached to the substrate (101) with a second material (131). The first element is then released from the substrate (101) by contacting the second material (131) with a second etchant.
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