SEMICONDUCTOR FABRICATION METHOD FOR FORMING TRANSISTOR OF LDD STRUCTURE BY PERFORMING PHOTO-MASK PROCESS ONLY ONCE

摘要

PURPOSE: A semiconductor fabrication method is provided to prevent the misalignment and adjust easily length of an LDD region and a channel region by performing the photo-mask process only once. CONSTITUTION: A gate electrode and a gate oxide layer(30) are formed on a semiconductor substrate(10). A polysilicon layer is deposited thereon. First impurity ions are implanted therein. A photoresist pattern is formed to define an impurity diffusion region. Second impurity ions are implanted therein. A spacer is formed on a sidewall of the photoresist pattern. A channel region is formed by implanting second impurity ions therein after forming a spacer. A thermal process is performed after removing the photoresist pattern and the spacer therefrom.