METHOD OF MANUFACTURING IG WAFER AND IG WAFER MANUFACTURED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a desired IG effect by reducing the number of times of heat treatment in a state of a wafer in addition to the absence of aggregates having point defects. SOLUTION: A silicon wafer, on which an OSF is formed on 25% or larger of the total area of the wafer during an OSF actualization thermal process and oxygen deposit causing no dislocation is formed at a density of 1×105to 3×107/cm2, is rapidly heated from a room temperature to 1,100 to 1,250°C at a temperature increase rate of 3°C/minute to 150°C/second in hydrogen gas or an atmosphere containing hydrogen gas, and then, the silicon wafer is kept for 1 minute to 2 hours. COPYRIGHT: (C)2004,JPO&NCIPI