MANUFACTURING METHOD OF FERROELECTRIC MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a ferroelectric memory element wherein the upper surface of an upper electrode is made a smooth surface by preventing columnar residue from being formed in formation of the upper electrode. SOLUTION: A lower electrode Ir layer 36, a ferroelectric film [SrBi2Ta2O9(SBT)] 38 and an Ir layer 40a for upper electrode formation are formed on a foundation one by one. An etching resistant mask TiN film 42a for upper electrode formation is formed on the upper surface of the Ir layer 40a and a first dry etching process is carried out. A ferroelectric memory element is formed by removing the etching resistant mask TiN film 42a in a third dry etching process after a second dry etching process for removing deposit sticking on the etching resistant mask TiN film 42a by the first dry etching. COPYRIGHT: (C)2004,JPO&NCIPI