发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a TTG-DFB (turnable twin guided distributed feedback) laser device capable of sustaining an appropriate coupling coefficient and having characteristics suitable for use as an optical source for communication. SOLUTION: At a distance from an active layer and in the direction of thickness, a tuning layer is arranged, which has a transition wavelength which is shorter than the wavelength of simulated emission from the active layer. In between the active layer and the tuning layer, a diffraction grating layer is arranged, whose refraction index periodically varies relative to the direction of an optical resonator. A first electrode supplies a current to the active layer. A second electrode supplies a current to the tuning layer, and this current is supplied independently from the current for the active layer. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241570(A) 申请公布日期 2004.08.26
申请号 JP20030028555 申请日期 2003.02.05
申请人 FUJITSU LTD 发明人 SEKINE NORIHIKO
分类号 H01S5/00;H01S5/028;H01S5/062;H01S5/12;H01S5/22;H01S5/227;H01S5/32;H01S5/343;(IPC1-7):H01S5/062 主分类号 H01S5/00
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