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发明名称
具有不会发生凹陷(DIVOT)之浅沟槽隔结构(STI)之半导装置及其制造方法
摘要
半导体装置之制造方法具有以下步骤:藉由使用包含有第一氮化矽薄膜及具有窗口的图案作为遮罩蚀刻半导体基板以形成隔离沟槽;沉积覆盖隔离沟槽的内表面之第二氮化矽薄膜;形成埋入隔离沟槽的第一氧化矽薄膜;蚀刻并去除在隔离沟槽上面区域的第一氧化矽薄膜;蚀刻并去除露出的第二氮化矽薄膜;化学机械研磨第二氧化矽薄膜;以及蚀刻并去除露出的第一氮化矽薄膜。
申请公布号
TW200416942
申请公布日期
2004.09.01
申请号
TW092132374
申请日期
2003.11.19
申请人
富士通股份有限公司
发明人
大田裕之
分类号
H01L21/76
主分类号
H01L21/76
代理机构
代理人
洪武雄;陈昭诚
主权项
地址
日本
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