| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for thinning a single crystal semiconductor layer and selectively forming an SON structure in an element unit, and to provide a manufacturing method of a semiconductor substrate. <P>SOLUTION: A porous silicon layer 1A is formed in an element forming region S on a silicon substrate 1 and regions X surrounding a periphery, and a first epitaxial growing layer 2A is formed on an upper face of the porous silicon layer 1A. An opening part is formed in a part of the regions X surrounding the element forming region S on the first epitaxial growing layer 2A. The porous silicon layer 1A is removed from the opening part by etching, and a hole H is formed in the silicon substrate 1. The opening part of the first epitaxial growing layer 2A and the hole just under the opening part are filled with a second epitaxial growing layer 2B, and a MOS-type transistor is formed on the second epitaxial growing layer 2B just above the hole part H. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
