| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a polysilicon film of a small thickness consisting of large silicon crystal grains on a surface of a substrate, and to provide a liquid crystal panel device manufactured by using this method. SOLUTION: A method is provided, wherein the polysilicon film 55 is formed on the surface of the glass substrate 100 by chemical vapor deposition using plasma of SiH4 gas and H2 gas. Amorphous silicon a formed in the film is removed by etching with an additional use of a halide gas plasma in forming the polysilicon film 55. COPYRIGHT: (C)2005,JPO&NCIPI |
