发明名称 SEMICONDUCTOR DYNAMIC QUANTITY SENSOR
摘要 PROBLEM TO BE SOLVED: To realize reductions in installation costs of a sensor, miniaturization of a device using the sensor having a structure which can detect dynamic quantity in biaxial directions, and provide a sensor having good output characteristics. SOLUTION: A beam structure 4 made from impurity diffusion polysilicon is supported to face an opening part 3 formed on a support substrate 2 and is displaced corresponding to effects by acceleration in the Z axis direction which is orthogonal to the main surface of the support substrate 2. On the beam structure 4, a movable electrode 6d in which a surface parallel to the displacement direction is made to be an electrode surface is combined. On the support substrate 2, the first non-movable electrode 7a made from impurity diffusion polysilicon is provided so that a facing area against the movable electrodes 6d changes according to the displacement of the beam structure 4. Above the first non-movable electrode 7a, the second non-movable electrode 9a made from impurity diffusion polysilicon is provided through the first non-movable electrode 7a and an auxiliary insulated separation film 8 so that a facing area against the movable electrodes 6d changes according to the displacement of the beam structure 4. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004286535(A) 申请公布日期 2004.10.14
申请号 JP20030077746 申请日期 2003.03.20
申请人 DENSO CORP 发明人 TSUBAKI KOICHI
分类号 B81B3/00;G01P9/04;G01P15/08;G01P15/125;H01L29/84;(IPC1-7):G01P15/125 主分类号 B81B3/00
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