METHOD FOR REMOVING SURFACE OXIDE CAUSED BY ELECTRONIC BUMPING FOR WAFER BUMPING TO ELIMINATE METAL OXIDE FROM SURFACE OF BASE MATERIAL

摘要

PURPOSE: A method for removing a surface oxide caused by electronic bumping for wafer bumping is provided to eliminate a metal oxide from the surface of a base material by eliminating the necessity of flux. CONSTITUTION: A base material adjacent to the first electrode is prepared. The first electrode and the second electrode adjacent to the base material are prepared. At least a part of a process surface of the base material is exposed to the second electrode. The first electrode, the second electrode and the base material exist in a target region. Gas compound including reducing gas passes through the target region. Energy is supplied to at least one of the first or second electrode to generate electrons in the target region. At least a part of the electrons is attached to at least a part of the reducing gas to form reducing gas of negative charges. The reducing gas of negative charges contacts the process surface to reduce the metal oxide on the process surface of the base material.