METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE REDUCING SIGNAL DELAYS AND CROSSTALKS

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a signal delay and a signal crosstalk on copper interconnections while maintaining the strength of the interconnection structures. CONSTITUTION: A semiconductor substrate(1) having a lower layer(2) and a silicon oxide layer(3) is provided. A first copper interconnection(4a) have a first width and is spaced with a first spacing on a predetermined region of the silicon oxide layer. A second copper interconnections(4b) have a second width small than the first width and are spaced with a second spacing smaller than the first spacing. A photoresist pattern exposing the second copper interconnections and a silicon oxide layer therebetween is formed on the silicon oxide layer having the first and second copper interconnections. A portion of the exposed silicon oxide layer is etched and the photoresist pattern is removed. A first USG(Undoped Silicate Glass) layer(7) is vaporized to form an air gap among the second copper interconnections using a PVD(Physical Vapor Deposition). A second USG layer(8) is vaporized on the first USG layer. A capping layer(9) is vaporized on the second USG layer.