METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE IMPROVING CD UNIFORMITY USING COMPENSATION PATTERN

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve CD(Critical Dimension) uniformity by forming a compensation pattern at edges of a substrate to reduce the difference of etch selectivity between center and edge portions. CONSTITUTION: An etch stop layer(32), an oxide layer(33) and a hard mask are sequentially formed on a silicon substrate(31). A hard mask pattern is formed to define a contact hole region. A compensation pattern made of a photoresist layer is formed at edge portions of the substrate to reduce the difference of etch selectivity between center and edge portions. Contact holes(38) are formed by etching the oxide layer and the etch stop layer using the hard mask pattern and the compensation pattern.