发明名称 METHOD OF CLEANING AND DRYING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To suppress the residue of particles in the outer peripheral section of a substrate and, at the same time, the collapse of a resist pattern in cleaning and drying the substrate by rotating the substrate. SOLUTION: In cleaning and drying a substrate 100 to be treated by rotating the substrate 100, the rotating speedω<SB>dr</SB>of the substrate 100 is reduced in accordance with the radius r of a dried area, by increasing the supplied amount of a rinsing solution to the substrate 100 as going toward the outer peripheral section of the substrate 100 from the central part of the substrate 100, while a rinsing nozzle 103 is moved toward the outer periphery from the center of the substrate 100. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004335542(A) 申请公布日期 2004.11.25
申请号 JP20030125571 申请日期 2003.04.30
申请人 TOSHIBA CORP 发明人 ITO SHINICHI
分类号 G03F7/30;B08B3/02;H01L21/027;H01L21/304;(IPC1-7):H01L21/304 主分类号 G03F7/30
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