发明名称 |
Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same |
摘要 |
A disclosed method for forming a non-volatile memory cell includes forming a component stack including an electron trapping layer on a substrate surface. A dielectric layer is formed over the component stack, and a portion is removed such that a remainder of the dielectric layer exists substantially along sidewalls of the component stack. An oxide layer is formed over a bit line in the substrate adjacent to the component stack, and an electrically conductive layer is formed over the component stack and the oxide layer. A described non-volatile memory cell includes a component stack on a substrate surface, the component stack including an electron trapping layer. Multiple dielectric spacers are positioned along sidewalls of the component stack. An oxide layer is positioned over a bit line in the substrate adjacent to the component stack, and an electrically conductive layer is positioned over the component stack and the oxide layer.
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申请公布号 |
US2004262664(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030609075 |
申请日期 |
2003.06.27 |
申请人 |
HSU FU-SHIUNG;LIU CHEN-CHIN |
发明人 |
HSU FU-SHIUNG;LIU CHEN-CHIN |
分类号 |
H01L21/28;H01L21/8246;H01L27/115;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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