| 摘要 |
PROBLEM TO BE SOLVED: To improve sensitivity by reducing the area ratio of a transistor occupying a unit pixel in an MOS type image sensor. SOLUTION: In this solid state imaging device where unit pixels are two-dimensionally arranged, the unit pixel being constituted of: a photo-diode 1 in an embedded structure for performing photo-conversion; a transfer transistor 2 for transferring signal charge stored in the photo-diode; a signal storing part 3 for storing the signal charge transferred by a transfer transistor 2; a reset transistor 4 for exhausting the signal charge from the signal storing part 3; and an amplification transistor 5 for outputting a signal corresponding to the potential of the signal storing part, the drain voltages of the reset transistor 4 and the amplification transistor 5 commonly connected are controlled by a pixel power source driving circuit 14 arranged separately from a vertical scanning circuit 7 which controls the gates of the reset transistor 4 and the transfer transistor 2 by a line unit, so that pixels can be selected by line a unit. COPYRIGHT: (C)2005,JPO&NCIPI
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