ELECTRONIC DEVICE AND OPERATION METHOD THEREOF

摘要

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a plurality of first lines extending in a first direction and arranged in parallel to each other; a plurality of second lines extending in a second direction crossing the plurality of first lines and arranged in parallel to each other; and a plurality of memory cells disposed in intersection regions of the plurality of first lines and the plurality of second lines, respectively, and wherein each of the memory cells may include: a selecting element including a switching element and a thermoelectric element that are coupled to each other, the switching element having a non-linear current-voltage characteristic; a variable resistance element coupled to the selecting element; and a heat insulating member surrounding at least a sidewall of the selecting element.

主权项

1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
a plurality of first lines extending in a first direction and arranged in parallel to each other; a plurality of second lines extending in a second direction crossing the plurality of first lines and arranged in parallel to each other; and a plurality of memory cells disposed in intersection regions of the plurality of first lines and the plurality of second lines, respectively, wherein each of the memory cells comprises: a selecting element including a switching element and a thermoelectric element that are coupled to each other, the switching element having a non-linear current-voltage characteristic; a variable resistance element coupled to the selecting element; and a heat insulating member surrounding at least a sidewall of the selecting element.