| 发明名称 |
NONVOLATILE MEMORY DEVICE |
| 摘要 |
A nonvolatile memory device may include a first well area formed on a substrate, a plurality of channel layers disposed on the first well area and extended in a first direction substantially perpendicular to a surface of the first well area on which the channel layers are disposed, and a plurality of gate conductive layers stacked on the first well area along side walls of the plurality of channel layers, the plurality of gate conductive layers having a first edge area and a second edge area, wherein a first part of the first edge area is disposed outside of the first well area. |
| 申请公布号 |
US2016329340(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615083418 |
申请日期 |
2016.03.29 |
| 申请人 |
HWANG CHUL-JIN;KIM HYUN-DO;SHIN DONG-HA |
发明人 |
HWANG CHUL-JIN;KIM HYUN-DO;SHIN DONG-HA |
| 分类号 |
H01L27/115;H01L21/306;H01L29/423 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device, comprising:
a first well area formed on a substrate; a plurality of channel layers disposed on the first well area and extended in a first direction substantially perpendicular to a surface of the first well area on which the channel layers are disposed; and a plurality of gate conductive layers stacked on the first well area along side walls of the plurality of channel layers, the plurality of gate conductive layers having a first edge area and a second edge area, wherein a first part of the first edge area is disposed outside of the first well area. |
| 地址 |
SEONGNAM-SI KR |
