| 摘要 |
PROBLEM TO BE SOLVED: To suppress a wide range of variations in the surface area of an opening formed in a light receiving part of a solid state imaging device. SOLUTION: In a method for manufacturing a solid state imaging device, a light receiver 2 is formed in a semiconductor substrate 1, a light shielding film 12 made of a metal included in a metal-contained gas as a main component is formed by a CVD method using a mixture gas of the metal-contained gas and a nitrogen gas, so as to cover the semiconductor substrate 1 and the light receiver 2, the light shielding film 12 is selectively removed to form an opening 9 above the light receiver 2. Consequently, the light shielding film having a small surface average roughness can be obtained, and variations in the surface area of the opening caused by the surface average roughness of the light shielding film can be suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
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