| 摘要 |
PURPOSE: A non-volatile ferroelectric memory device is provided to detecting plural cell data in a reference timing strobe period by setting various sensing voltage level at a sensing threshold voltage. CONSTITUTION: A non-volatile ferroelectric memory device comprises plural cell array blocks, a timing data register array, a common data bus part. And the timing data register array(300) comprises a sense amplifier array(302) for outputting plural sensing data levels by comparing plural cell data sensing voltages applied from the common data bus part(500) during an enabling period of the first sensing control signal to plural sensing threshold voltages; a data register array(310) for storing plural sensing data levels applied from the sense amplifier array according to an enabling of the second sensing control signal during a lock signal(LOCKN0-LOCKN2) activation, and outputting plural data register signals(DREG(0:2)); a decoder(330) for outputting plural coding signals(DEC_ENC(0:2)) to the data register array part by decoding an input data applied from a timing data buffer part(100) through a data buffer bus part(200); an encoder(340) for encoding and outputting the plural coding signals applied from the data register array to the data buffer bus part(200); a D/A converter(350) for converting the plural data register signals(DREG(0:2)) into an analog reference level signals and outputting that to the common data bus part(500).
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