| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein metal knock-on during ion implantation can be restrained, and to provide a method for manufacturing the semiconductor device. SOLUTION: When etching for forming a transfer gate wiring 15 is performed, a thermal oxidation film 13 is made to remain thickly at both sides of the transfer gate wiring 15 by reducing over etching of the thermal oxidation film 13. After performing cleaning for eliminating adhered metal contaminant K on the thermal oxidation film 13, ion implantation is performed in a semiconductor substrate 11, and impurity diffused layers 16a-16c are formed on both sides of the transfer gate wiring 15. COPYRIGHT: (C)2005,JPO&NCIPI
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