| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of particles in a reaction pipe, and to produce a high quality semiconductor device at a high yield rate. SOLUTION: A sub-bypass pipe 65 including a sub-valve SSV is formed in parallel with a bypass pipe 64 for slow exhaustion of an exhaust system of a heat treating apparatus. A wafer boat 14 is loaded to the reaction pipe 11 or unloaded from it, while exhausting with the sub-bypass pipe 65 by opening the sub-valve SSV, thereby sublime gas or particles of a reaction by-product is or are prevented from being adsorbed to a semiconductor substrate 15. COPYRIGHT: (C)2005,JPO&NCIPI
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