| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of reducing the variations of sheet resistance without restricting the variations of the residual film of a gate insulating film. SOLUTION: In a manufacturing step S1, a semiconductor thin film, a gate insulating film, and a gate electrode layer are stacked on an insulating substrate, and is then etched to form a gate electrode. In a manufacturing step S2, a channel region and an impurity doped region are formed by doping impurities into the semiconductor thin film in a low dose. In a manufacturing step S3, counter doping is made into the impurity doped region. Namely, a small quantity of an opposite conductivity type impurities to the foregoing impurities are doped into the impurity doped region. Preferably, part of the impurity doped region other than a neighbourhood of the gate electrode is subjected to the counter doping. In a manufacturing step S4, a lightly doped region and a heavily doped region are formed, and in a manufacturing step S5, a source electrode and a drain electrode are formed. COPYRIGHT: (C)2005,JPO&NCIPI
|
