| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device wherein processing is eased and wiring is protected during manufacturing and that is provided with a highly reliable wiring structure, and to provide its manufacturing method. SOLUTION: The upper surfaces of lower layer wirings 33 and 34 in a peripheral circuit B are covered with the same material as at least the base metal layer 26a of a pin layer 26 comprising a TMR device 10, so that the lower layer wirings 33 and 34 can be protected during etching when the device is divided, and they are hard to be exposed. Therefore, the wiring resistance of the lower layer wiring can be kept lower, and connection with the upper layer wiring is made appropriate, and furthermore a copper as wiring material can be prevented from being dispersed upward or downward. COPYRIGHT: (C)2005,JPO&NCIPI
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