发明名称 |
PLASMA PROCESSING APPARATUS AND TREATMENT ROOM INTERNAL SURFACE STABILIZATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a treatment room internal surface stabilization method which removes a deposition film in a treatment room and suppress corrosion of a wall surface in a plasma etch processing apparatus. SOLUTION: In the treatment room internal surface stabilization method of the plasma processing apparatus which generates plasma by introducing raw gas in a treatment room in which a processed object is installed, and the processed object is processed after a cleaning treatment (step S2) following an etching treatment (step S1). A treatment room internal surface stabilization treatment (step S3) is performed wherein O<SB>2</SB>gas or F gas as an internal surface protective gas for protecting the treatment room internal surface is introduced and plasma treatment is performed. Consequently, the treatment room surface of a wall is stabilized, and material constituting the treatment room wall surface is prevented from being discharged in the treatment room at the time of etching treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005056925(A) |
申请公布日期 |
2005.03.03 |
申请号 |
JP20030206247 |
申请日期 |
2003.08.06 |
申请人 |
HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KITSUNAI HIROYUKI;ONO TETSUO;ITABASHI NAOSHI;KIKKAI MOTOHIKO |
分类号 |
C23C16/44;H01L21/205;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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