Programming method, memory storage device and memory controlling circuit unit

摘要

A programming method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a first write command; and selecting a first physical erasing unit and sending a first skipping write command sequence according to the first write command. The first skipping write command sequence instructs to execute a first skipping programming process. The first skipping programming process includes: programming first data into a first word line of the first physical erasing unit; and after the first word line is programmed, skipping a second word line adjacent to the first word line, and programming the first data into a third word line not adjacent to the first word line.

主权项

1. A programming method for a rewritable non-volatile memory module comprising a plurality of physical erasing units, and the programming method comprising:
receiving at least one first write command; determining whether a current state of the rewritable non-volatile memory module matches at least one first condition; selecting a first physical erasing unit from the physical erasing units and sending a first skipping write command sequence according to the at least one first write command after it is determined that the current state of the rewritable non-volatile memory module matches the at least one first condition, wherein the first skipping write command sequence instructs to execute a first skipping programming process, wherein the first skipping programming process comprises:
programming a first word line among a plurality of word lines of the first physical erasing unit according to first data corresponding to the at least one first write command; andafter the first word line is programmed, skipping at least one second word line adjacent to the first word line among the word lines of the first physical erasing unit, and programming a third word line not adjacent to the first word line among the word lines of the first physical erasing unit according to the first data; and sending a normal write command sequence if the current state of the rewritable non-volatile memory module does not match the at least one first condition, wherein the normal write command sequence instructs to execute a normal programming process, wherein the normal programming process comprises:
programming the first word line according to the first data; andafter the first word line is programmed, programming the at least one second word line according to the first data.