发明名称 MASK FOR USE IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
摘要 The mask has a pattern of opaque structures applied on a support (28), where the opaque structures comprise coarser large-area structures and finer bar-like structures (32c). Transparent intermediate spaces (36, 36`) remaining between the bar-like structures (32c) are filled with a liquid or solid dielectric material (38, 38`). The opaque structures consist of an electrically conductive material. Independent claims are also included for the following: (A) a microlithographic projection exposure apparatus for the production of microstructured components (B) a method for the microlithographic production of a microstructured component (C) a method for producing a mask for use in a microlithographic projection exposure apparatus.
申请公布号 KR20050045871(A) 申请公布日期 2005.05.17
申请号 KR20040091172 申请日期 2004.11.10
申请人 CARL ZEISS SMT AG 发明人 GRUNER, TORALF;HETZLER, JOCHEN;TOTZECK, MICHAEL
分类号 G02F1/13;G03B27/42;G03C5/00;G03F1/00;G03F7/20;G03F9/00;H01L21/027 主分类号 G02F1/13
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