| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can be reduced in threshold current and driving voltage by expanding a light emitting layer (or active layer) by avoiding light absorption in a clad layer, and can obtain an almost perfect circular beam shape at a narrow emitting beam expansion angle. SOLUTION: The semiconductor light emitting element is provided with an n-type substrate 101 composed of a single semiconductor crystal, an n-type electrode 113 provided on the rear surface of the substrate 101, and an n-type clad layer 103 formed on the surface of the substrate 101. The element is also provided with the light emitting layer 105 formed on the layer 103, a current layer 106 formed on the layer 105, and a p-type clad layer 109 formed on the layer 106. In addition, the element is also provided with a symmetrical mesa structure formed on the surface of the layer 109, an n-type current constricting layer 110 formed on the surface of the p-type clad layer 109 except the top of the mesa structure, and a p-type contact layer 111 formed on the top of the mesa structure and the surface of the current constricting layer 110. Moreover, the element is also provided with a p-type electrode 112 provided on the layer 111. COPYRIGHT: (C)2005,JPO&NCIPI
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