| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device with which an angled portion of the bottom can be formed in a large radius of curvature with higher accuracy without widening the aperture of a groove (trench). SOLUTION: A V-shape groove 4 formed of the planes (111) and (111) having the angle of 54°and 74°to the plane (100) is formed to a semiconductor substrate 1 by conducting wet etching (KOH etching 3) as the anisotropic etching using the aqueous solution of potassium hydroxide, the V-shape groove 4 is further deepened with the etching as the anisotropic etching RIE5 to form a deep groove 6, and the angled portion of the groove can be rounded by forming the groove 8 in which the angled portion of the top of the V-shape of the bottom is rounded by the anisotropic etching of the entire part of the internal wall of the groove 6 with the CDE7. Centralization of field in the offset drain layer 9 can be controlled by rounding the angled portion and thereby a leak current can be reduced. Moreover, the ON-resistance can be lowered because the width of the aperture of the groove 9 is not widened. COPYRIGHT: (C)2005,JPO&NCIPI
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