SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a substrate with little dislocation in a semiconductor element layer. SOLUTION: In the manufacturing method of the silicon carbide semiconductor substrate, a buffer layer with slits is disposed on the silicon carbide semiconductor substrate, and dislocation from the substrate is bent by the buffer layer and is opened by the slit on the side of the buffer layer or the slit on the side of the semiconductor element layer. The semiconductor element layer is arranged on the buffer layer. COPYRIGHT: (C)2005,JPO&NCIPI