发明名称 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC STORAGE CELL AND MAGNETIC MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a magnetic memory device which uses efficiently a magnetic field formed by a current flowing in a write-in line, enables stable information write-in, and has a high degree of freedom on design. SOLUTION: A magnetic yoke 4 which is arranged annularly along the circumferential direction so that a write-in word line 6 and a write-in bit line 5 are surrounded, and has a pair of open ends K4 mutually opposite to both sides of a gap formed in a part of the circumference direction, and a lamination S20 which includes a second magnetic layer 8 whose magnetization direction is changed by an external magnetic field and has a pair of end surfaces K20, are installed. The lamination S20 is arranged in a gap in such a manner that each of a pair of the end surfaces K20 and each of a pair of the open ends K4 are opposite to each other. Consequently, while the flux inversion of the second magnetic layer 8 can be performed efficiently, a material which constitutes the lamination S20 can be selected from a wide range as compared with the case that the lamination and a magnetic yoke are in contact with each other, so that magnetic and electric performance can be drawn out sufficiently. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005129587(A) 申请公布日期 2005.05.19
申请号 JP20030361050 申请日期 2003.10.21
申请人 TDK CORP 发明人 UEJIMA SATOSHI;SHIMAZAWA KOJI;HADATE HITOSHI
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/105 主分类号 G11C11/15
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