| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of preventing an insulating film from being peeled off due to stress. SOLUTION: First dummy wiring which is not used as a circuit is formed on a 1st inter-layer insulating film formed on a semiconductor substrate, a 2nd inter-layer insulating film having a via plug connected to the 1st dummy wiring is formed, a 3rd inter-layer insulating film having a groove for wiring a 2nd dummy wiring which is not used as a circuit is formed to make the upper surface of a via plug exposed, metal is formed on the wiring groove and the 3rd inter-layer insulating film, and then the metal is polished, in order to remote the metal formed on the 3rd inter-layer insulating film. COPYRIGHT: (C)2005,JPO&NCIPI |
