发明名称 MONOLITHIC INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING COIL THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a coil for a monolithic integrated circuit by which a conductive carbon nano coil can be so grown as to connect electrodes on a semiconductor substrate, and to provide a monolithic integrated circuit which is such that the inter-electrode carbon nano coil manufactured by the above method, transistors, and other components are integrally formed on one and the same semiconductor substrate. SOLUTION: A catalyst is deposited at electrodes (12a) and (12b) on both sides of a coil on the semiconductor substrate (11). Then, the semiconductor substrate (11) is sent into a reaction tube (10) of vapor phase epitaxy equipment, and a reaction material is sent into the reaction tube (10), wherein the reaction material is carried on a carrier gas. By causing the reaction material to react with the catalyst deposited at the electrodes (12a) and (12b) on both sides of the coil which is now located in a heat-up section, the carbon nano coil (13) is grown to connect the electrodes (12a) and (12b) on both sides of the coil. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150307(A) 申请公布日期 2005.06.09
申请号 JP20030384114 申请日期 2003.11.13
申请人 TOYO UNIV 发明人 TSUBAKI KOTARO
分类号 B82B3/00;H01L21/285;H01L21/822;H01L27/04;H01L29/06;(IPC1-7):H01L21/822 主分类号 B82B3/00
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