| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows a simultaneous pursuit of reliability with which the temperature of a switch device is precisely detected, and stability which prevents erroneous detection, at a higher level, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device comprises a MOSFET 100 as a switch device, and a pn diode 200 as a protective device. The MOSFET 100 comprises an n<SP>+</SP>-type first source region 4, a first drain region 2, an n<SP>-</SP>-type first channel region 5, a first gate dielectric 6, and a first gate electrode 7 comprised of a p-type polycrystalline silicon carbide, which are all formed on a semiconductor substrate that has as part thereof a first substrate region 1 of n<SP>+</SP>-type silicon carbide of 4H type having a band gap wider than that of silicon, and a first drain region 2 of n<SP>-</SP>-silicon carbon. The pn diode 200 comprises an anode region 11 comprised of a p-type polycrystalline silicon carbide that is formed on an interlayer dielectric 10 comprised of SiO<SB>2</SB>, and a cathode region 12 comprised of an n-type polycrystalline silicon carbide. COPYRIGHT: (C)2005,JPO&NCIPI |
