| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which maintains an IE effect and improves a breakdown strength. SOLUTION: In an IEGT 1 having a dummy cell region DC, a narrow second emitter layer 32 is selectively formed on the surface layer of a dummy base layer 18, and the base layer 18 is connected to an emitter electrode 28 through this second emitter layer 32 and a via contact 30, and the resistance value of a floating resistor 34 is adjusted by shapes of the second emitter layer 32 and the via contact 30. COPYRIGHT: (C)2005,JPO&NCIPI
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