发明名称 |
Method of designing and method of using a phase-shift mask |
摘要 |
Method for utilizing halftoning structures (1704) to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0<th>-diffraction-order, equal-line-and-space chromeless phase edges to weak phase-shifters that have some 0<th> order. Halftoning creates an imbalance in the electric field between the shifted regions, and therefore results in the introduction of the 0<th> diffraction order. <IMAGE> |
申请公布号 |
EP1152288(B1) |
申请公布日期 |
2005.08.03 |
申请号 |
EP20010303850 |
申请日期 |
2001.04.27 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
CHEN, JANG-FUNG;PETERSEN, JOHN S. |
分类号 |
G03F1/00;G03F1/26;G03F1/32;G03F7/20;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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