发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention relates to a method for fabricating a semiconductor device. The method comprises the steps of: 1. A method for fabricating a semiconductor device, which comprises the steps of: forming a gate line on a semiconductor substrate; forming junction regions in the semiconductor substrate at both sides of the gate line; forming and selectively removing an interlayer insulating film on the substrate to form contact holes exposing the junction regions; forming plugs in the contact holes; and implanting impurity ions into the plugs; and annealing the junction regions. |
申请公布号 |
US6927152(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20030738394 |
申请日期 |
2003.12.17 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JIN SEUNG WOO;LEE TAE HYEOK;KIM BONG SOO |
分类号 |
H01L21/336;H01L21/425;H01L21/44;H01L21/8238;H01L21/8239;H01L21/8242;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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