| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor laser device that has current restricting layers having a sufficient thickness to reduce a light absorption loss and threshold currents and working currents as well. SOLUTION: The manufacturing method includes a process of forming a first conductive-type clad layer 3, an active layer 4, a second conductive-type first clad layer 5, a second conductive-type etching stop layer 6, a second conductive-type second clad layer 7, and a second conductive-type cap layer 8 on a semiconductor board 2, a process of forming a mask layer 14 at a prescribed spot on the cap layer 8, a process of forming a ridge stripe structure 9 by etching the cap layer 8 and the second clad layer 7, a process of forming the first conductive-type current restricting layers 10<SB>1</SB>, 10<SB>2</SB>on the etching stop layer 6 so that the current restricting layers 10<SB>1</SB>, 10<SB>2</SB>cover the upper surface and both side faces of the ridge stripe structure 9, a process of eliminating the part of current restricting layers 10<SB>1</SB>, 10<SB>2</SB>that is on the mask layer 14 and reducing the thickness of the part of current restricting layers 10<SB>1</SB>, 10<SB>2</SB>that is on the etching stop layer 6 into a prescribed thickness, a process of eliminating the mask layer 14, and a process of forming a second conductive-type contact layer 11. COPYRIGHT: (C)2005,JPO&NCIPI
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