| 摘要 |
PROBLEM TO BE SOLVED: To reduce an element size and improve reliability in a memory element having a structure where a memory gate and a control gate are adjacent to each other. SOLUTION: The side surface of the memory gate 115 in contact with the control gate 126 is formed by etch back. The side surface is made to be an arcuate bent surface which is protruded on the side thereof in contact with the control gate 126. Consequently, the short circuit between electrodes caused by the emergence of a thin film on an HTO film 118 is suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
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