| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be improved in threshold controllability and reliability by fabricating gate electrodes in accordance with the use of field effect transistors, by using material properties of a full silicide gate and a gate with a partially silicified silicide. SOLUTION: The semiconductor device is integrated field effect transistors Tr1 and Tr2. Each of the field effect transistors Tr1 and Tr2 comprises a gate electrodes FG and SG formed on a semiconductor substrate 1 via a gate insulation film 4, a source region 9 and a drain region 9 formed in the semiconductor substrate 1, with the gate electrode FG and SG inbetween, and a channel formed below the gate electrodes FG and SG. The gate electrodes FG and SG of the field effect transistors Tr1 and Tr2 are selectively formed as the full silicide gate FG and the gate SG with partially silicified silicide, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
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