| 摘要 |
PROBLEM TO BE SOLVED: To provide a one-time programmable memory with high reliability and high yield. SOLUTION: The one-time programmable memory by means of a scheme of transiting from a state with high electric resistance to a state with low resistance by causing a metal and silicon to react to be a silicide, and making the high resistance state (metal/silicon isolated state) and the low resistance state (silicide state) correspond to 0 and 1, employs a substrate material which lowers interfacial energy on an interface with the silicide layer constituting the low resistance state. COPYRIGHT: (C)2005,JPO&NCIPI
|
