| 摘要 |
<p>A magnetic memory device in which the MRAM elements are magnetically shielded adequately against even a strong external magnetic field. Even if the MRAM elements are in the magnetic field of the environment where the magnetic memory device is installed, the operation is ensured without any problem. A magnetic random access memory (MRAM) (30) comprises a TMR element (10) in which fixed magnetization layers (4, 6) where the direction of magnetization is fixed and a magnetic layer (memory layer) (2) where the direction of magnetization can be changed are provided in the form of a multilayer. This magnetic random access memory (30) is mounted on a substrate mixedly together with another device (38) such as a DRAM. Magnetic shield layers (33, 34) are provided in, when viewed from above, the area that the MRAM element (30) occupies, and/or the distance (particularly the length or width) between the opposed sides of each of the magnetic shield layers (33, 34) is 15 mm or less.</p> |
